ISRO Scientist or Engineer Electronics 2015

For the following questions answer them individually

A sample of Si is doped with $$10^{17}$$ donor atoms/cm$$^3$$. Considering electron mobility in the doped Si 700 cm$$^2$$/V-sec, the approximate resistivity of the doped Si is:

Spectrum of a signal x(t), sampled at period T, is given by:

A 70 MHz carrier is QPSK modulated by a 1.544 Mbps T1 data stream. The transmitter employs a raised-cosine filter with $$\alpha = 0.2$$ What is the transmitted bandwidth of the
signal?

If two tones $$f_1$$, and $$f_2$$, are amplified by a non-linear amplifier, which frequency components would be present in output?

A signal transmitted from an Earth station bounces back from a geostationary satellite, with an altitude of 35864 km from the Earth surface. The range from the Earth station is
38200 km. The round trip time is about: (excluding processing delays and assuming $$c = 3 \times 10^8Β Β m/s$$)

Which of the following is not true?

The following Finite State Machine (FSM) is used to detect a particular pattern in input data stream. Whenever the pattern is matched at input, output is set to β€˜l’ or else output is cleared to β€˜0’. For which of the following data stream, output goes to β€˜1’ twice?

Consider a sequence x(n) = [2, 4, 6, 8, 0, 1, 3, 5, 7, 9]. Down-sample the sequence by 3 and then up-sample by 2. The resulting sequence is:

The phase velocity of a plane wave given by $$E_x = E_o \cos(\omega t - \beta z)$$ with a frequency of 5.0 GHz and a wavelength in the material medium of 3.0 cm is:

The highest frequency for which a circular coaxial transmission line having outer diameter = 3.1 mm and inner diameter = 1.3 mm can be operated in pure TEM mode (assuming free space medium between the two conductors) should be less than:

In a communication system at 300 MHz, the receiving antenna gain is 8 dBi, the transmitting antenna gain is 10 dBi and the transmitting power level is 25 watts, the distance between the transmitter and the receiver is 1 km, the power received at the receiving antenna port (assuming the propagation medium is loss-less):

A rectangular waveguide with air medium has dimensions a = 22.86 mm and b = 10.6 mm is fed by 3 GHz carrier from a coaxial cable, which of the following is false statement for $$TE_{01}$$ mode?

Ratio of skin depths of an Electromagnetic wave inside the conductor for the corresponding frequencies at 4 GHz and 9 GHz, considering the same material properties for both the frequencies is:

A lossless transmission line with characteristic impedance $$Z_0 = 50$$ ohm is 30 m long and operates at 2 MHz. Theline is shorted at the load, if the phase velocity = 0.6 times the velocity of light, the input impedance of the line is:

A parabolic reflector antenna used for reception of data is 1 meter in diameter and operates at 30 GHz. The far field distance of this antenna for a quadratic phase error of 22.5 degree is:

A potential field is given by $$\phi = 2 xy^2 - 3 y^2z$$. If $$\hat{x}, \hat{y}, \hat{z}$$ are the unit vectors along x, y and z directions respectively, the field intensity at (0, 1, 0) is:

A plane wave $$E = 100 \sin(\omega t - 10 x) V/m$$ in a loss less medium with $$\mu = 4 \mu_o, Ξ΅ = Ξ΅_o$$ strikes another medium with 90 degree angle of incidence having $$\mu = 9 \mu_o, Ξ΅ = Ξ΅_o$$, the reflection co-efficient is:

What is the functionality of following digital circuit? A is input data, CLK is system clock and Y is output.

A lossless transmission line has the distributed circuit parameters of inductance and capacitance per meter as 625 nH/m and 64 pF/m respectively, the phase constant of the line at 100 MHz is:

If n number of MOSFETs with identical W/L are connected in series, then equivalent W/L is given by:

What will be the content of Accumulator, Register-B and Overflow Flag (OV) after execution of following 8051 micro-controller assembly code?
MOV A, #65h
MOV OFOh, #14h
DIV AB
DIV AB

Gain and NF of a single stage amplifier is 10 dB and 3 dB respectively. When two such amplifiers cascaded then gain and NF of cascaded amplifier will be:

Reason for superior high frequency performance of metal-semiconductor diode compared to p-n junction diode is:

Input reflection coefficient β€˜S11’ of the 2-port network for 50 Ξ© system is:

The graph below shows operating load line and I-V characteristic of a Schottky diode at two different RF power levels. Under this bias condition RF resistance of the diode:

A BJT is having common emitter current gain 100. Considering 10 V supply and $$V_{BE} = 0.7 V$$ what will be the value of $$R_C$$ and $$R_B$$ to set the quiescent point at $$I_c = 10 mA$$ and $$V_{CE} = 8 V$$

A high gain MESFET packaged device of case-to-channel thermal resistance of the device is $$4.5^\circ C$$/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at $$55^\circ C$$?

For a class-A FET power amplifier with 10 V drain supply and 2 A drain current bias providing RF load current of 1 A amplitude. What is the DC to RF efficiency for load resistance of 5 Ξ©?

A unilateral transistor has an output impedance $$Z_{out} = (10 - j10)Ξ©$$. Value of the series and shunt components of the matching network for complex conjugate match at the output of the device to 50 Ξ© load are:

Acommunication channel is having a bandwidth of 3000 Hz. The transmitted poweris such that the received Signal-to-Noise ratio is 1023. The maximum data rate that can be transmitted t error-free through the channel is:

A CDMA system requires $$E_b/I_o$$, of 10 dB. Each of the transmitters in the network transmits data at the rate of 1 Kbps with a PN chip rate of 1 Mbps. The maximum number of such users that the network can support is:

Laplace transform of $$e^{\theta t} \sin(\omega t)$$ is:

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