ISRO Scientist or Engineer Electronics 2015
For the following questions answer them individually
A BJT is having common emitter current gain 100. Considering 10 V supply and $$V_{BE} = 0.7 V$$ what will be the value of $$R_C$$ and $$R_B$$ to set the quiescent point at $$I_c = 10 mA$$ and $$V_{CE} = 8 V$$
A high gain MESFET packaged device of case-to-channel thermal resistance of the device is $$4.5^\circ C$$/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at $$55^\circ C$$?
For a class-A FET power amplifier with 10 V drain supply and 2 A drain current bias providing RF load current of 1 A amplitude. What is the DC to RF efficiency for load resistance of 5 Ω?
A unilateral transistor has an output impedance $$Z_{out} = (10 - j10)Ω$$. Value of the series and shunt components of the matching network for complex conjugate match at the output of the device to 50 Ω load are:
Acommunication channel is having a bandwidth of 3000 Hz. The transmitted poweris such that the received Signal-to-Noise ratio is 1023. The maximum data rate that can be transmitted t error-free through the channel is:
A CDMA system requires $$E_b/I_o$$, of 10 dB. Each of the transmitters in the network transmits data at the rate of 1 Kbps with a PN chip rate of 1 Mbps. The maximum number of such users that the network can support is:
