ISRO Scientist or Engineer Electronics 2015
For the following questions answer them individually
ISRO Scientist or Engineer Electronics 2015 - Question 61
Equivalent circuit of FET is shown in the figure below,
where $$r_s = 100 Ω, C_{gs} = 0.1 pF$$ and $$g_m = 0.1 mho$$. For load resistance $$r_L = 500 Ω$$, the voltage gain at 1 GHz is:
ISRO Scientist or Engineer Electronics 2015 - Question 62
Which of the following is true for an NMOS transistor operating in linear region?
ISRO Scientist or Engineer Electronics 2015 - Question 63
Magnitude of input impedance of a $$\frac{\lambda}{8}$$ lossless 50 Ω transmission line terminated with 25 Ω is:
ISRO Scientist or Engineer Electronics 2015 - Question 64
Pipelining techniqueis used in microprocessor to improve which of the following parameter?
ISRO Scientist or Engineer Electronics 2015 - Question 65
In case of an ideal Class-F microwave power amplifier, time domain voltage and current waveform of the device have:
ISRO Scientist or Engineer Electronics 2015 - Question 66
Reason for superior high frequency performance of metal-semiconductor diode compared to p-n junction diode is:
ISRO Scientist or Engineer Electronics 2015 - Question 67
Which of the following diodes is most suitable for detection of microwave signal?
ISRO Scientist or Engineer Electronics 2015 - Question 68
Which device is suitable for higher order RF frequency multiplier?
ISRO Scientist or Engineer Electronics 2015 - Question 69
Input reflection coefficient ‘S11’ of the 2-port network for 50 Ω system is:
ISRO Scientist or Engineer Electronics 2015 - Question 70
The graph below shows operating load line and I-V characteristic of a Schottky diode at two different RF power levels. Under this bias condition RF resistance of the diode:
