ISRO Scientist or Engineer Electronics 2015
For the following questions answer them individually
Equivalent circuit of FET is shown in the figure below,
where $$r_s = 100 Ω, C_{gs} = 0.1 pF$$ and $$g_m = 0.1 mho$$. For load resistance $$r_L = 500 Ω$$, the voltage gain at 1 GHz is:
Magnitude of input impedance of a $$\frac{\lambda}{8}$$ lossless 50 Ω transmission line terminated with 25 Ω is:
Pipelining techniqueis used in microprocessor to improve which of the following parameter?
In case of an ideal Class-F microwave power amplifier, time domain voltage and current waveform of the device have:
Reason for superior high frequency performance of metal-semiconductor diode compared to p-n junction diode is:
The graph below shows operating load line and I-V characteristic of a Schottky diode at two different RF power levels. Under this bias condition RF resistance of the diode:
