A sample of Si is doped with $$10^{17}$$ donor atoms/cm$$^3$$. Considering electron mobility in the doped Si 700 cm$$^2$$/V-sec, the approximate resistivity of the doped Si is:

A

1 Ω-cm

B

10 Ω-cm

C

0.1 Ω-cm

D

100 Ω-cm