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The transconductance g_ of an FET in the saturation region equals
$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]$$
$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]^{2}$$
$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]^{\frac{1}{2}}$$
$$\frac{I}{V_{p}} \left[I_{DSS} \times I_{DS}\right]^{\frac{1}{2}}$$
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