The transconductance g_ of an FET in the saturation region equals

A

$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]$$

B

$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]^{2}$$

C

$$\frac{-2I_{Dss}}{V_{p}} \left[1 - \frac{V_{GS}}{V_{P}}\right]^{\frac{1}{2}}$$

D

$$\frac{I}{V_{p}} \left[I_{DSS} \times I_{DS}\right]^{\frac{1}{2}}$$