In a p-n junction diode, the current (i) varies with applied biasing voltage (V) and can be expressed as $$i = i_0\left(e^{qV/kT} - 1\right)$$ where $$i_0 = 5\times 10^{-12}$$ A is reverse saturation current, k is Boltzmann constant and q is the charge on the electron. At absolute temperature $$T = 300$$ K

The forward current is approximately 59.5 mA for a forward bias of 0.6 volt

The current increases approximately by 2.75 A if the biasing voltage changes from 0.6 V to 0.7 V

The dynamic resistance of p-n junction is approximately $$435\ \text{m}\Omega$$ at the biasing voltage of 0.6 V

The change in reverse bias current when biasing voltage change from $$-1$$ volt to $$-2$$ volt happens to be practically zero