In a MOSFET $$SiO_{2}$$, breaks down at electric field of the order of $$5 \times 10^{6}  V/cm$$. For a gate oxide of thickness 1000 A and channel thickness of $$2 \mu m$$, what is the maximum $$V_{GS}$$ it can with stand ?

A

5 V

B

10 V

C

100 V

D

None of the Above