In a p-type Si at 300 K and $$N_a = 8 \times 10^{15}  cm^{-3}$$, variation of space-charge density in the semiconductor as a function of surface potential is plotted, then select the true statement for weak inversion region. Given that $$p_{s}$$ and $$n_{s}$$ are hole and electron concentrations at the surface.

A

$$p_{s} > N_{a}$$

B

$$n_{s} > N_{a}  and  n_{s} >  p_{s}$$

C

$$n_{s} < N_{a}  and  p_{s} < N_{a}$$

D

$$n_{s} > N_{a}$$