Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having doping density of $$10^6$$ atoms/cm$$^3$$ at 300K temperature. Determine the approximate resistivity of the slab. (Consider intrinsic carrier concentration of Silicon at 300 K = $$1.5 \times 10^{10}$$ /cm$$^3$$ Hole Mobility = 500 cm$$^2$$/Vsat 300 K; Electron Mobility = 1300 cm$$^2$$/Vs at 300 K).

A

0.48 Ω-cm

B

0.35 Ω-cm

C

0.16 Ω-cm

D

1.25 Ω-cm