In a semiconductor p-n  diode, the doping concentrations on p-side has $$10^{15}$$ atoms/cm³ and the n-side has $$10^{18}$$ atoms/cm³respectively.  Which one of the following statements is true?

A

Widths of depletion region on either side of the interface are equal 

B

The depletion region widths is more on p-side compared to that in n-side

C

The depletion region width is more on n-side compared to that the p-side

D

No depletion region forms because of unequal doping concentrations on p and n-sides