Statement I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II: When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below.

Statement I is correct.

When Silicon is doped with Boron (trivalent impurity), it forms a P-type semiconductor with excess holes as majority charge carriers.

When Silicon is doped with Arsenic (pentavalent impurity), it forms an N-type semiconductor with excess electrons as majority charge carriers.

Statement II is incorrect.

When P-type and N-type semiconductors are joined, diffusion of charge carriers takes place initially and a depletion region is formed. After equilibrium is reached, no current flows automatically through the junction unless an external bias is applied.

Hence, Statement I is true but Statement II is false.

Final Answer :

Statement I is true and Statement II is false.