For extrinsic semiconductors; when doping level is increased;

In an intrinsic semiconductor, the Fermi level lies exactly at the middle of the energy gap between the valence band and the conduction band.

For an $$n$$-type semiconductor, when donor impurities are added, more electrons are available in the conduction band. As the doping level increases, the concentration of electrons in the conduction band increases, and the Fermi level shifts upward towards the conduction band. At very high doping levels, the Fermi level can even enter the conduction band.

For a $$p$$-type semiconductor, when acceptor impurities are added, more holes are created in the valence band. As the doping level increases, the concentration of holes in the valence band increases, and the Fermi level shifts downward towards the valence band. At very high doping levels, the Fermi level can even enter the valence band.

Therefore, when the doping level is increased, the Fermi level of $$p$$-type semiconductors goes downward and the Fermi level of $$n$$-type semiconductors goes upward.